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| 2SB772 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors Features * Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.550.2 TO-92 3.50.2 4.50.2 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -40 -30 -6 -3 0.625 150 -55~150 Units V V V A W o 14.30.2 0.46+0.1 -0.1 (1.27 Typ. ) 123 1.25-0.2 +0.2 0.43+0.08 -0.07 C C o 1: Emitter 2: Collector 3: Base 2.540.1 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) VBE(sat) unless Test otherwise specified TYP MAX UNIT V V V -1 -10 -1 60 32 -0.5 -1.5 50 V V MHz 400 A A A -40 -30 -6 conditions IB=0 MIN Ic=-100A IE=0 IC= -10 mA , IE= -100 AIC=0 VCB= -40 V , IE=0 VCE=-30 V , IB=0 VEB=-6V , IC=0 VCE= -2V, IC= -1A VCE=-2V, IC= -100mA IC=-2A, IC=-2A, IB= -0.2A IB= -0.2A IC=-0.1A fT VCE= -5V, f = 10MHz CLASSIFICATION OF hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 http://www.SeCoSGmbH.com/ 01-Jun-2005 Rev. B Any changing of specification will not be informed individual Page 1 of 2 2SB772 Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2005 Rev. B Any changing of specification will not be informed individu Page 2of 2 |
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